Triad gate drive transformers are used universally in all high frequency switching topologies to isolate the control circuitry from the line-connected switches. The windings are interleaved for the lowest possible practical leakage inductance. Turn ratios of 1:1 and 1:1.5 optimize coupling and enhance performance. Available with single or dual secondaries, these transformers constructed of UL rated 130 ºC materials are easily standardized at operating frequencies 200 kHz and beyond.
Item # |
Max. DCR 1-2 |
Max. DCR Gate |
Min. ET Product |
Max. Leakage |
Min. Inductance |
|---|---|---|---|---|---|
| GDE25-1 | Max. DCR 1-2 N/A 0.350 Ohm | Max. DCR Gate N/A 0.350 Ohm | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 2.5 µH | Min. Inductance N/A 0.680 mH |
| GDE25-2 | Max. DCR 1-2 N/A 0.350 Ohm | Max. DCR Gate N/A 0.650 Ohm | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 2.5 µH | Min. Inductance N/A 0.680 mH |
| GDE25-3 | Max. DCR 1-2 N/A 0.875 Ohm | Max. DCR Gate N/A 0.350 Ohm | Min. ET Product N/A 840 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 1.50 mH |
| GDE25-4 | Max. DCR 1-2 N/A 0.875 Ohm | Max. DCR Gate N/A 0.650 Ohm | Min. ET Product N/A 840 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 1.50 mH |
| GDE25-5 | Max. DCR 1-2 N/A 0.350 Ohm | Max. DCR Gate N/A 0.875 Ohm | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 0.680 mH |
| GDE25-6 | Max. DCR 1-2 N/A 0.350 Ohm | Max. DCR Gate N/A 01.75 Ohm | Min. ET Product N/A 540 VµSEC | Max. Leakage N/A 3.5 µH | Min. Inductance N/A 0.680 mH |
